型号:

DMP21D0UFB4-7B

RoHS:无铅 / 符合
制造商:Diodes Inc描述:MOSF P CH 20V 770MA DFN1006H4-3
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
DMP21D0UFB4-7B PDF
标准包装 10,000
系列 -
FET 型 MOSFET P 通道,金属氧化物
FET 特点 逻辑电平门
漏极至源极电压(Vdss) 20V
电流 - 连续漏极(Id) @ 25° C 770mA
开态Rds(最大)@ Id, Vgs @ 25° C 495 毫欧 @ 400mA,4.5V
Id 时的 Vgs(th)(最大) 700mV @ 250µA
闸电荷(Qg) @ Vgs 1.54nC @ 8V
输入电容 (Ciss) @ Vds 80pF @ 10V
功率 - 最大 430mW
安装类型 表面贴装
封装/外壳 3-XFDFN
供应商设备封装 3-DFN1006H4(1.0x0.6)
包装 带卷 (TR)
其它名称 DMP21D0UFB4-7BDITR
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